Laboratory Course - Microelectronics Fabrication Curriculum

    This course is an introductory survey for chemical and electrical engineers of chemical processing principles applied to microelectronic device fabrication. Key concepts originate from chemical kinetics; thermodynamics; mass and energy balances; transport of mass, momentum, and heat; and process synthesis and integration. The course assumes a minimal prior training in chemistry, and is may serve as an ECE technical elective.

    Course Overview

    Presentation on how class has been developed and shared experience on teaching the course. Read more.

    Complete Syllabus

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    Format: 1 Lecture per Class Session, Original course taught twice weekly. Exam's replace lectures during scheduled class sessions.
    Required Text: The Science and Engineering of Microelectronic Fabrication, S. A. Campbell, Oxford, 2nd ed., 2001.

    ChBE 393/469A Course Structure:

    Lect. No.

    Topics

    Underlying Concepts

    Reading in Campbell

    1
    2

    Industry history
    SIA Roadmap
    Semiconductor materials

    Overall perspective

    Ch.1, FEOL video

    3
    4
    5

    Semiconductor physics
    pn junctions
    Field effects

    Solid state physics

    Notes

    6
    7

    Lithography

    Optics

    Ch. 7.1, 7.3-7.6, 8.1-8.6

    8

    9

    Etching (wet)

    Buffers
    Electrochemistry

    Ch. 11.1

    10

    Etching (dry)

    Plasma phenomena

    Ch. 11.3-11.7

    11

    Etching (dry)

    Plasma phenomena

    Ch. 11.3-11.7

    12

    Physical vapor Deposition

    Sputtering physics
    Process control

    Ch. 12.1-12.7, 12.10-12.11, 12.13

    13a
    13b

    Rapid thermal processing

    Rate selectivity
    Process control

    Notes, Ch. 6.2-6.3

     

    Hour Exam 1

    		    
     

     Microelect. Lab Tour

    		    

    14
    15
    16
    17

    Chemical vapor
    Deposition
    (Note Lecture 17 on hold at time of posting)

    Surface kinetics
    Kinetics/gas transport
    Boundary layers
    Case study: TiSi 2

    Ch. 13.1-13.4

    18

    Si oxidation

    Rate-limiting steps
    Diffusion-rxn (differential
    mass balances, 1-D)

    Ch. 4.1-4.4, 4.6

    19
    20

    Si refining

    Well-stirred reactors
    Differential mass balances on distributions

    Notes
    469B abstract due

    21

    Czochralski growth

    Separations by crystallization Differential energy balances (1-D)

    Ch. 2.4-2.8

     

    Hour Exam 2

    		   

    22

    Diffusional doping

    Defect thermodynamics
    Transient diffusion equations

    Ch. 3.1-3.5
    BEOL video

    23

    Diffusional doping

    Defect thermodynamics
    Transient diffusion equations

    Ch. 3.1-3.5

    24

    Ion implantation
    Transient enhanced diffusion

    Implantation physics
    Diffusion-rxn (3-D PDE's)

    Ch. 5.1, 5.6

    25

    Packaging

    Electrochemistry
    1-D heat transfer

    Notes
    469B term paper due

    26

    		 Factory-level issues Process integration Notes
     

    Final Exam

    		   

    Complete Lecture Download
    Complete Exam Download
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